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| 2003. 2. 25 1/2 semiconductor technical data kdr721s schottky barrier type diode (cathode command) revision no : 1 for high speed switching circuit. for small current rectification. features h low forward voltage : v f max=0.55v. h i o =200ma recification possible. maximum rating (ta=25 ? ) dim millimeters sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.40+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 q 0.1 max 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ q 1. anode 1 2. anode 2 3. cathode 2 1 3 electrical characteristics (ta=25 ? ) type name marking lot no. mf characteristic symbol test condition min. typ. max. unit reverse voltage v r i r =1ma 30 - - v forward voltage v f i f =0.2a - - 0.55 v reverse current i r v r =30v - - 50 a total capacitance c t v r =10v, f=1mhz - 13 - pf reverse recovery time t rr i r =i f =10ma - 3 - ns characteristic symbol rating unit repetitive peak reverse voltage v rrm 30 v reverse voltage v r 30 v average forward current i o 0.2 a non-repetitive peak surge current i fsm 1 a junction temperature t j 125 ? storage temperature t stg -55 q 125 ?
2003. 2. 25 2/2 kdr721s revision no : 1 |
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